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Silicon wafers are mainly used in various fields such as memory, logic integrated circuit, power device and sensor, etc. They can be also directly applied to varieties of silicon substrates like CMOS, EPI and SOI..... They are the building block of modern electronics. PGO TECH provides different diameter Silicon Wafers (300mm, 200mm, 150mm, 125mm, 100mm, 76mm, 50mm and 25mm) in a variety of specifications, suitable for a wide range of applications.
Our Virgin Silicon substrates are made from High Purity silicon ingot using the most commonly known crystal growing process called the Czochralski (CZ) process .
PGO TECH is also conforming to energy-saving trends by providing ultra-high doped silicon wafer, to satisfy low resistance RDS on inquiry, which is an important factor in low voltage Power MOSFET device.
The wafers are desiccated with a nitrogen purge to evacuate humidity down, tape sealed, double bagged (PE + Aluminum Bag), and then vacuum packed in a class 1-10 clean room environment.
Also,We are committed to meet our customer's requirements either special specifications or standard.
Typical Silicon Wafer Specifications:
TYPE |
DOPANT |
DIAMETER(mm) |
Resistivity(ohm.cm) |
Thickness |
P |
Boron |
50/76/100/125/150/200/300 |
0.0006-200 |
From 160um-3000um |
N |
Phosphorus |
50/76/100/125/150/200/300 |
0.0011-60 |
|
N |
Arsenic |
50/76/100/125/150/200/300 |
0.002-0.01 |
|
N |
Antimony |
50/76/100/125/150/200/300 |
0.007-0.025 |
|
Surface |
Single Side Polished (SSP) -Double Side Polished (DSP) -As cut- Lapped- Etched |
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Application |
Memory, logic integrated circuit, power device, sensor; Denotation: computer, video and audio equipment, DSC, automobile, mobile phone; Silicon substrate such as CMOS, EPI, SOI, MEMS |
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